Electrical properties of HfO2/La2O3 gate dielectrics on Ge with ultrathin nitride interfacial layer formed by in situ N2/H2/Ar radical pretreatment

Ming-Ho Lin, Chun-Kai Lan, Chih-Chiao Chen, Jyun-Yi Wu
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3658397
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