Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

G. Dingemans, N. M. Terlinden, M. A. Verheijen, M. C. M. van de Sanden, W. M. M. Kessels
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3658246
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