Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

A. Y. Polyakov, Lee-Woon Jang, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, T. G. Yugova, V. Y. Reznik, S. J. Pearton, Kwang Hyeon Baik, Sung-Min Hwang, Sukkoo Jung, In-Hwan Lee
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3658026
The author haven't yet claimed this publicationThe author haven't yet claimed this publication