Production of vacancy-oxygen defect in electron irradiated silicon in the presence of self-interstitial-trapping impurities

V. V. Voronkov, R. Falster, C. A. Londos, E. N. Sgourou, A. Andrianakis, H. Ohyama
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3657946