A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming

  • Yukihiro Kaneko, Yu Nishitani, Michihito Ueda, Eisuke Tokumitsu, Eiji Fujii
  • Applied Physics Letters, October 2011, American Institute of Physics
  • DOI: 10.1063/1.3657413

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http://dx.doi.org/10.1063/1.3657413

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