Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy

  • H. W. Yu, E. Y. Chang, Y. Yamamoto, B. Tillack, W. C. Wang, C. I. Kuo, Y. Y. Wong, H. Q. Nguyen
  • Applied Physics Letters, October 2011, American Institute of Physics
  • DOI: 10.1063/1.3656737

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