Performance and stability of amorphous InGaZnO thin film transistors with a designed device structure

J. Zhang, X. F. Li, J. G. Lu, Z. Z. Ye, L. Gong, P. Wu, J. Huang, Y. Z. Zhang, L. X. Chen, B. H. Zhao
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3656444