Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]

M. A. Moram, M. J. Kappers, F. Massabuau, R. A. Oliver, C. J. Humphreys
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3656431