Comment on “The effects of Si doping on dislocation movement and tensile stress in GaN films” [J. Appl. Phys. 109, 073509 (2011)]

A. Dadgar, A. Krost
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3656430
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The following have contributed to this page: Armin Dadgar