Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

G. Grzybowski, L. Jiang, J. Mathews, R. Roucka, C. Xu, R. T. Beeler, J. Kouvetakis, J. Menéndez
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3655679
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