Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

  • M. A. Reshchikov, A. G. Willyard, A. Behrends, A. Bakin, A. Waag
  • Applied Physics Letters, October 2011, American Institute of Physics
  • DOI: 10.1063/1.3655678

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http://dx.doi.org/10.1063/1.3655678

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