Comprehensive surface analysis of GaN-capped AlGaN/GaN high electron mobility transistors: Influence of growth method

R. Gutt, M. Himmerlich, M. Fenske, S. Müller, T. Lim, L. Kirste, P. Waltereit, K. Köhler, S. Krischok, T. Fladung
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3653825
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