Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si

M. Steger, A. Yang, T. Sekiguchi, K. Saeedi, M. L. W. Thewalt, M. O. Henry, K. Johnston, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3651774
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