Developmental mechanism for the resistance change effect in perovskite oxide-based resistive random access memory consisting of Bi2Sr2CaCu2O8+δ bulk single crystal

A. Hanada, K. Kinoshita, K. Matsubara, T. Fukuhara, S. Kishida
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3651465