Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeOx films grown by molecular beam deposition

Alessandro Molle, Silvia Baldovino, Marco Fanciulli, Dimitra Tsoutsou, Evangelos Golias, Athanasios Dimoulas
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3651400
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