Stress migration risk on electromigration reliability in advanced narrow line copper interconnects

A. Heryanto, K. L. Pey, Y. K. Lim, N. Raghavan, W. Liu, J. Wei, C. L. Gan, J. B. Tan
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3651385
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