Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure

Michihito Ueda, Yoshihisa Kato, Eisuke Tokumitsu, Eiji Fujii, Yukihiro Kaneko, Yu Nishitani, Hiroyuki Tanaka
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3651098
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