Enhanced Rashba effect in transverse magnetic fields observed on InGaAs/GaAsSb resonant tunneling diodes at temperatures up to T = 180 K

  • J. Silvano de Sousa, H. Detz, P. Klang, E. Gornik, G. Strasser, J. Smoliner
  • Applied Physics Letters, October 2011, American Institute of Physics
  • DOI: 10.1063/1.3650715

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http://dx.doi.org/10.1063/1.3650715

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