Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

M. Eickelkamp, M. Weingarten, L. Rahimzadeh Khoshroo, N. Ketteniss, H. Behmenburg, M. Heuken, D. Donoval, A. Chvála, P. Kordoš, H. Kalisch, A. Vescan
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3647589
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