Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film

  • Hiroaki Arimura, Yuki Odake, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
  • Applied Physics Letters, October 2011, American Institute of Physics
  • DOI: 10.1063/1.3646378

The authors haven't yet claimed this publication.

Read Publication

http://dx.doi.org/10.1063/1.3646378

In partnership with: