Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film

  • Hiroaki Arimura, Yuki Odake, Naomu Kitano, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
  • Applied Physics Letters, October 2011, American Institute of Physics
  • DOI: 10.1063/1.3646378

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