Chemical insight into origin of forming-free resistive random-access memory devices

  • X. Wu, Z. Fang, K. Li, M. Bosman, N. Raghavan, X. Li, H. Y. Yu, N. Singh, G. Q. Lo, X. X. Zhang, K. L. Pey
  • Applied Physics Letters, September 2011, American Institute of Physics
  • DOI: 10.1063/1.3645623

The authors haven't yet claimed this publication.

Read Publication

In partnership with:

Link to American Institute of Physics showcase