Temperature and excitation intensity dependence of photoluminescence in AlGaN quantum wells with mixed two-dimensional and three-dimensional morphology

G. Rajanna, W. Feng, S. Sohal, V. V. Kuryatkov, S. A. Nikishin, A. A. Bernussi, M. Holtz
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3645044