Origin of the electrical instabilities in GaN/AlGaN double-barrier structure

  • S. Sakr, E. Warde, M. Tchernycheva, L. Rigutti, N. Isac, F. H. Julien
  • Applied Physics Letters, October 2011, American Institute of Physics
  • DOI: 10.1063/1.3645011

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http://dx.doi.org/10.1063/1.3645011

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