Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, N. Okada, M. Kato, H. Uchida, F. Yano, A. Nishida, T. Mogami, Y. Nagai
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3644960