Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling

E. Scalise, M. Houssa, G. Pourtois, V. V. Afanas’ev, A. Stesmans
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3644158
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