Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance

T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, T. Ohshima, N. Morishita, J. Isoya
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3644156