Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics

Yuanjie Lv, Zhaojun Lin, Lingguo Meng, Yingxia Yu, Chongbiao Luan, Zhifang Cao, Hong Chen, Baoquan Sun, Zhanguo Wang
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3643139
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