Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields

N. T. Woodward, N. Nepal, B. Mitchell, I. W. Feng, J. Li, H. X. Jiang, J. Y. Lin, J. M. Zavada, V. Dierolf
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3643041
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