Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

F. Y. Meng, H. McFelea, R. Datta, U. Chowdhury, C. Werkhoven, C. Arena, S. Mahajan
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3643001