Hole effective mass in silicon inversion layers with different substrate orientations and channel directions

L. Donetti, F. Gámiz, S. Thomas, T. E. Whall, D. R. Leadley, P.-E. Hellström, G. Malm, M. Östling
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3639281