Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm

H. F. Liu, W. Liu, A. M. Yong, X. H. Zhang, S. J. Chua, D. Z. Chi
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3638703