Elastic relaxation in an ultrathin strained silicon-on-insulator structure

Gang Xiong, Oussama Moutanabbir, Xiaojing Huang, Seyed A. Paknejad, Xiaowen Shi, Ross Harder, Manfred Reiche, Ian K. Robinson
  • Applied Physics Letters, September 2011, American Institute of Physics
  • DOI: 10.1063/1.3637634

Edge relaxation of strained silicon

What is it about?

The edges of a strained nanometre-sized slab of silicon are found to relax when the material is cut to create devices. The measurement is a validation of our new coherent X-ray diffraction technique.

Why is it important?

Strain engineering is a vital industrial process to enhance the carrier mobilities in semiconductor devices. The question of whether or not the deformations of strained silicon nano-structures obey classical macroscopic laws of elasticity is tested in this work. Without this validation, the predictive power of simulation codes would be brought into question.

The following have contributed to this page: Ian robinson