Elastic relaxation in an ultrathin strained silicon-on-insulator structureGang Xiong, Oussama Moutanabbir, Xiaojing Huang, Seyed A. Paknejad, Xiaowen Shi, Ross Harder, Manfred Reiche, Ian K. Robinson
- Applied Physics Letters, September 2011, American Institute of Physics
- DOI: 10.1063/1.3637634
Edge relaxation of strained silicon
What is it about?
The edges of a strained nanometre-sized slab of silicon are found to relax when the material is cut to create devices. The measurement is a validation of our new coherent X-ray diffraction technique.
Why is it important?
Strain engineering is a vital industrial process to enhance the carrier mobilities in semiconductor devices. The question of whether or not the deformations of strained silicon nano-structures obey classical macroscopic laws of elasticity is tested in this work. Without this validation, the predictive power of simulation codes would be brought into question.