Insight into low frequency noise induced by gate leakage current in AlGaAs/GaAs high electron mobility transistors at 4.2 K

  • Y. X. Liang, Q. Dong, M. C. Cheng, U. Gennser, A. Cavanna, Y. Jin
  • Applied Physics Letters, September 2011, American Institute of Physics
  • DOI: 10.1063/1.3637054

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