Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications

J. Müller, T. S. Böscke, D. Bräuhaus, U. Schröder, U. Böttger, J. Sundqvist, P. Kücher, T. Mikolajick, L. Frey
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3636417
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The following have contributed to this page: Tim Böscke and Prof. Dr.-Ing. Thomas Mikolajick