PN junction rectification in electrolyte gated Mg-doped InN

  • E. Alarcón-Lladó, M. A. Mayer, B. W. Boudouris, R. A. Segalman, N. Miller, T. Yamaguchi, K. Wang, Y. Nanishi, E. E. Haller, J. W. Ager
  • Applied Physics Letters, September 2011, American Institute of Physics
  • DOI: 10.1063/1.3634049

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