Enhancement of channel conductivity in AlGaN/GaN heterostructure field effect transistors by AlGaN:Si back barrier

  • E. Cho, F. Brunner, R. Zhytnytska, P. Kotara, J. Würfl, M. Weyers
  • Applied Physics Letters, September 2011, American Institute of Physics
  • DOI: 10.1063/1.3634032

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http://dx.doi.org/10.1063/1.3634032

The following have contributed to this page: Prof. Dr. Markus Weyers