Enhancement of channel conductivity in AlGaN/GaN heterostructure field effect transistors by AlGaN:Si back barrier

R. Zhytnytska, P. Kotara, J. Würfl, M. Weyers, E. Cho, F. Brunner
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3634032
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The following have contributed to this page: Prof. Dr. Markus Weyers