Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

Matt D. Brubaker, Igor Levin, Albert V. Davydov, Devin M. Rourke, Norman A. Sanford, Victor M. Bright, Kris A. Bertness
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3633522
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