Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

F. E. Rougieux, B. Lim, J. Schmidt, M. Forster, D. Macdonald, A. Cuevas
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3633492