Selective Ge heteroepitaxy on free-standing Si (001) nanopatterns: A combined Raman, transmission electron microscopy, and finite element method study

G. Kozlowski, Y. Yamamoto, J. Bauer, M. A. Schubert, B. Dietrich, B. Tillack, T. Schroeder
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3631783
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