Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

Emre Gür, Zeng Zhang, Sriram Krishnamoorty, S. Rajan, S. A. Ringel
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3631678
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