Electrical characteristics of gadolinium gallium oxide∕gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics

G. W. Paterson, S. J. Bentley, M. C. Holland, I. G. Thayne, A. R. Long
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3631076