Effect of Si-doping on InAs nanowire transport and morphology

S. Wirths, K. Weis, A. Winden, K. Sladek, C. Volk, S. Alagha, T. E. Weirich, M. von der Ahe, H. Hardtdegen, H. Lüth, N. Demarina, D. Grützmacher, Th. Schäpers
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3631026
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