On the stochastic nature of resistive switching in Cu doped Ge0.3Se0.7 based memory devices

R. Soni, P. Meuffels, G. Staikov, R. Weng, C. Kügeler, A. Petraru, M. Hambe, R. Waser, H. Kohlstedt
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3631013
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