InP-based InAs/InGaAs quantum wells with type-I emission beyond 3 μm

Y. Gu, Y. G. Zhang, K. Wang, X. Fang, C. Li, Y. Y. Cao, A. Z. Li, Y. Y. Li
  • Applied Physics Letters, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3629999