Applying x-ray microscopy and finite element modeling to identify the mechanism of stress-assisted void growth in through-silicon vias

L. W. Kong, J. R. Lloyd, K. B Yeap, E. Zschech, A. Rudack, M. Liehr, A. Diebold
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3629988
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