Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices

  • Yu-Ting Tsai, Ting-Chang Chang, Wei-Li Huang, Chih-Wen Huang, Yong-En Syu, Shih-Cheng Chen, Simon M. Sze, Ming-Jinn Tsai, Tseung-Yuen Tseng
  • Applied Physics Letters, August 2011, American Institute of Physics
  • DOI: 10.1063/1.3629788

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http://dx.doi.org/10.1063/1.3629788

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