What is it about?
The performance of laser diodes working below 350 nm (ultraviolet wavelength regime) can be drastically improved by nonpolar crystal planes. Light sources at around 265 - 280 nm are suitable for sterilization and water purification. The light emitting material is AlGaN alloy semiconductor.
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This page is a summary of: Impact of nonpolar AlGaN quantum wells on deep ultraviolet laser diodes, Journal of Applied Physics, August 2011, American Institute of Physics,
DOI: 10.1063/1.3627180.
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Resources
Understanding high efficiency of deep ultraviolet LEDs
The authors also performed characterizations to understand how the structure of AlGaN-based LEDs affects their efficiency.
High-speed solar-blind Li-Fi is possible with deep-ultraviolet LEDs
The authors have created deep ultraviolet LEDs containing many micro-LEDs, resulting in both high power and high data rates.
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