Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices

Alvaro Padilla, Geoffrey W. Burr, Charles T. Rettner, Teya Topuria, Philip M. Rice, Bryan Jackson, Kumar Virwani, Andrew J. Kellock, Diego Dupouy, Anthony Debunne, Robert M. Shelby, Kailash Gopalakrishnan, Rohit S. Shenoy, Bülent N. Kurdi
  • Journal of Applied Physics, September 2011, American Institute of Physics
  • DOI: 10.1063/1.3626047
The author haven't finished explaining this publicationThe author haven't finished explaining this publication

The following have contributed to this page: Dr Geoffrey William Burr