Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications

  • Manzar Siddik, Seungjae Jung, Jubong Park, Wootae Lee, Seonghyun Kim, Joonmyoung Lee, Jungho Shin, Sangsu Park, Daeseok Lee, Insung Kim, Hyunsang Hwang
  • Applied Physics Letters, August 2011, American Institute of Physics
  • DOI: 10.1063/1.3622656

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http://dx.doi.org/10.1063/1.3622656

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