Effects of interfacial oxide layers of the electrode metals on the electrical characteristics of organic thin-film transistors with HfO2 gate dielectric

W. M. Tang, M. T. Greiner, M. G. Helander, Z. H. Lu, W. T. Ng
  • Journal of Applied Physics, January 2011, American Institute of Physics
  • DOI: 10.1063/1.3622582